High dynamic range low-power differential input stage

ABSTRACT

A low-power high dynamic range RF input stage ( 200 ) with a noiseless degeneration component, such as a capacitor ( 201 ), is provided. High dynamic range means a combination of low noise contribution by the stage ( 200 ) and a low level of intermodulation products occurring especially at high input levels. Low power means that the power consumption of a conventional input stage is about  5  times higher than the power consumption of the stage according to the invention, for the same noise, gain and distortion level. This new stage can be used in amplifiers, but also in the lower stage of double balanced mixers ( 300 - 400 ) commonly used in RF receivers, examples of which are applications, are provided.

The present invention relates to a low-power differential input stage with a high dynamic range.

A typical differential input stage is illustrated in FIG. 1. The transistors 101 together form an amplifying stage. In order to achieve a low noise contribution, the internal base resistance value R_(b) of the two transistors 101 has a low value (15 Ω). Furthermore, the two degeneration resistors 102 of 15 Ω between the emitters also have a low value to minimize their thermal noise contribution. The total noise is determined by the sum of the two internal base resistors R_(b), the two resistors 102 between the emitters 104 and two times half the small signal internal emitter resistance.

r _(e) =kT/ql _(e)

where l_(e) is the emitter current of one transistor of the transistors, for 5 mA emitter current per transistor r_(e) equals 5 Ω per transistor. Then the noise contribution per transistor 101 equals r_(e)/2=2.5 Ω. All noise-contributing resistors add up to:

(R _(b) +R ₁₀₂ +R ₁₀₂ +r _(e)/2+r _(e)/20)=(15+15+15+15+2.5+2.5) Ω=65 Ω.

This results in a noise figure (NF), which is less than 3 dB. The 10 mA tail current generates a DC voltage across the resistors 102 between the emitters, with a value of 75 mV per resistor 102. This is necessary to obtain a high 3^(rd) order input intercept point (known as IP3) value of 118 dBμV (peak). The differential voltage gain A_(v) achieved by the stage is equal to the ratio of twice the collector resistance 103 to the total emitter resistance:

A _(v)=(50+50)/(5+15+15+5)=2.5.

A disadvantage of the prior art is that a high dynamic range can only be achieved at the expense of high power consumption. A circuit is desired that reduces this power consumption substantially while maintaining the same level of noise, gain and distortion performance.

The system and method of the present invention provide a high dynamic range low-power differential input stage.

A high dynamic range means a combination of:

-   -   a) low-noise contribution by the stage; and     -   b) a low level of inter-modulation products occurring especially         at high input signal levels (this is equivalent to a high 3^(rd)         order input intercept point, IP3).

Low power means that the power consumption of a conventional input stage is about 5 times higher than the power consumption of the system and method of the present invention for the same performance level.

In a preferred embodiment, emitter degeneration is achieved by a capacitor between the emitters instead of two resistors. Then the emitter current can be 5 times lower while the differential voltage gain remains unchanged.

Therefore, an input stage according to the invention requires only about one fifth of the current power consumption of a conventional input stage having the same performance. This energy saving is especially important for mobile and portable battery-fed equipment such as wireless LAN transceivers.

FIG. 1 illustrates a conventional differential input stage;

FIG. 2 illustrates a low-power high dynamic range differential input stage according to the present invention;

FIG. 3 illustrates an RF front end of an FM broadcast receiver modified according to the present invention;

FIG. 4 illustrates a UHF part of a TV set modified according to the present invention; and

FIG. 5 illustrates an RF front end for a wide band receiver modified according to the present invention.

It is to be understood by persons of ordinary skill in the art that the following descriptions are provided for purposes of illustration and not for limitation. An artisan understands that there are many variations that lie within the spirit of the invention and the scope of the appended claims. Unnecessary details of known functions and operations may be omitted from the current description so as not to obscure the present invention.

The system and method of the present invention provide a high dynamic range low-power differential input stage.

Referring now to FIG. 2, the transistors 101 are the same type as in the conventional input stage illustrated in FIG. 1. Consequently they have the same internal base resistance R_(b) of 15 Ω. The total tail current is:

2×1 mA=2 mA

instead of 10 mA in the conventional stage.

Emitter degeneration is achieved by a capacitor 201 between the emitters 104, instead of the two resistors 102. The value of this capacitor is in this example 10 pF and it contributes no noise to the circuit, assuming that the capacitor is lossless.

The noise is now determined by the sum of the two base resistors R_(b) and two times half the small signal emitter resistance r_(e) of the transistors. For 1 mA emitter current per transistor, r_(e) is 25 Ω. Therefore, the noise contribution per transistor is 12.5 Ω. All noise-contributing resistors have a total value of:

(15+15+12.5+12.5) Ω=55 Ω.

This then results in nearly the same NF as the conventional input stage, which is less than 3 dB.

In order to obtain the same 3^(rd) order input intercept point of 118 dBμV (peak) as with the conventional amplifier stage, the product of the impedance between the emitters 104 multiplied by the tail current should be the same. In the conventional stage the impedance between the emitters 104 is 30 Ω and the tail current is 10 mA. The impedance between the emitters 104 in the new stage of FIG. 2 is the reactance of 10 pF at a frequency of, e.g., 106 MHz, which amounts to 150 Ω. This is 5 times more than in the conventional stage; however since the 2 mA emitter tail current is 5 times lower, this results in the same 3^(rd) order input intercept point of 118 dBμV (peak). The differential voltage gain A_(v) remains unchanged, keeping in mind that the value of the collector resistors 103 has been increased from 50 Ohms to 250 Ohms:

A _(v)=(250+250)/(25+150+25)=2.5.

The circuit according to the present invention can also be used to increase the dynamic range when the same tail current is used as in the conventional stage. The increase of the dynamic range is then partly achieved by a reduction of the NF. The resistors contributing the noise are now the internal base resistors R_(b) and half of the r_(e) of the transistors 101. With a 5 mA emitter current r_(e) equals 5 Ω, i.e., a 2.5 Ω noise contribution per transistor. All noise-contributing resistors now have a total value of:

(15+15+2.5+2.5) Ω=35 Ω.

This results in a lower NF. Also the 3^(rd) order input intercept point increases. It was 118 dBμV (peak) for the product of 2 mA and 10 pF (150 Ω at 106 MHz), with 10 mA and 10 pF the 3^(rd) order input intercept point increases to 136 dBμV (peak). So with a lower Noise Figure and a higher 3^(rd) order input intercept point the dynamic range has been increased.

Referring now to FIG. 3, illustrated therein is an RF front-end mixer of an FM broadcast receiver modified according to the present invention. FIG. 3 shows an RF front-end broadcast receiver, which receives RF signals between 87.5 MHz and 108.0 MHz The lower stage of a conventional mixer resembles the circuit of FIG. 1, with the exception of the resistors 103. The collectors of transistors 101 are then directly connected to the emitters of the upper stage. Now the lower stage 301 of the double balanced mixer 303 comprises a low-power high dynamic range input stage (as shown in FIG. 2) according to the present invention. The gain variation across the input frequency band is 1.85 dB; this variation is caused by the frequency-dependent reactance of capacitor 201. In order to avoid parasitic oscillations in the gain stage by the capacitive load of the emitters (due to the capacitor 201 between the emitters 104), two 100 Ω resistors 103 have been connected in series with the collector leads 305.

In a conventional receiver the mixer is often preceded by a low-noise amplifier (LNA). The function of the LNA is to improve the noise figure of the receiver if the noise figure of the mixer is not good enough. The mixer according to the present invention may have such a low noise figure that the LNA can be omitted. If (due to the absence of the LNA) the gain in front of the mixer disappears, the IP3 requirement for this mixer can be reduced as well, resulting in additional power saving.

Referring now to FIG. 4, illustrated therein is a UHF part of a television (TV) set. In the lower stage of the double balanced mixer 401 the new low-power high dynamic range input stage 401 of the present invention is used. Instead of the fixed value capacitor 201 between the emitters 104, two variable capacitance diodes 402 are applied to obtain a flat gain response across the UHF band from 470 MHz to 862 MHz. The control voltage for these variable capacitance diodes is the same as the tuning voltage V_(TUNE) for the local oscillator driving the upper mixer stage. An increase of V_(TUNE) will reduce the capacitance of the capacitance diodes 402, and consequently the gain can be kept constant across the frequency band. If, instead of the two variable capacitance diodes, a fixed capacitor is used, the gain variation across the UHF band would be 5.2 dB. In order to avoid parasitic oscillations in the gain stage by the capacitive load of the emitters 104, two 100 Ω resistors 103 are connected in series with the collector leads of transistors 104.

Referring now to FIG. 5, illustrated therein is an RF front-end part of a wide band receiver. In the lower stage of the double balanced mixer 505 the low-power high dynamic range input stage 501 of the present invention is applied. In this application of the present invention, between the emitters 104 two variable capacitance diodes 502 are connected via two fixed series capacitors 503. Furthermore, the anode of the diodes is connected to the ground via a resistor 504 in order to obtain a DC path to the ground. Therefore, the anodes of the variable capacitance diodes are biased at a fixed 0V DC level. Consequently, a higher range of the capacitance variation is obtained, so the gain can be kept constant over a wider input frequency range. In order to avoid parasitic oscillations in the gain stage by the capacitive load of the emitters 104, two 100 Ω resistors 103 are connected in series with the collector leads of transistors 101.

This new stage can be used in amplifiers, but also in the lower stage of double balanced mixers commonly used in RF receivers, as illustrated in FIGS. 3, 4, 5.

Finally, it is possible to use other components for the amplification and degeneration components, e.g., a field effect transistor (FET), in place of a bipolar transistor. In the FET case the Noise Figure (NF) increases to 5 dB because of the lower transconductance of an FET compared with a bipolar transistor having the same tail current. Further, the 3^(rd) order intercept point increases and is higher than 118 dBμV (peak). In the case where the first and second differential input amplification component is a field effect transistor (FET), each has an internal gate series resistance R_(g) and a small signal source resistance r_(s) such that r_(s) is l/g_(m), where g_(m) is the transconductance of the FET. A first and second drain resistor is respectively connected to a first and second drain of the first and second FET. A noiseless degeneration component is connected between a first and second source, respectively, of the first and second FET, and the contribution to the noise level of the input stage is calculated as the sum of the two internal gate series resistors R_(g) plus two times the small signal source resistance of r_(s).

While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that the management frame, device architecture and methods as described herein are illustrative and various changes and modifications may be made and equivalents may be substituted for elements thereof without departing from the true scope of the present invention. In addition, many modifications may be made to adapt the teachings of the present invention to a particular situation without departing from its central scope, i.e., using a field effect transistor (FET) instead of a bipolar transistor. Therefore, it is intended that the present invention not be limited to the particular embodiments disclosed as the best mode contemplated for carrying out the present invention, but that the present invention include all embodiments falling within the scope of the appended claims. 

1. A low-power high dynamic range differential input stage, comprising: first and second differential input transistors connected to a differential input signal, each transistor having an internal base resistance of R_(b) and a small signal emitter resistance of r_(e); a first and second collector resistor respectively coupled to a first and second collector of the first and second differential transistor; and an emitter degeneration component connected between a first and second emitter, respectively, of the first and second differential transistor.
 2. The differential input stage of claim 1, wherein: the emitter degeneration component is a capacitor that contributes no noise to the input stage; and the noise contribution of the input stage is determined by the sum of the two internal base resistors R_(b) and two times half the small signal emitter resistance of r_(e).
 3. The differential input stage of claim 1, wherein: the differential input stage comprises a differential input topology having a first and second signal path side; the first and second transistors and resistors are arranged respectively in the first and second signal path side such that they are symmetrical with respect to each other; and a circuit that is laid out such that the current paths of the first and second signal path side of the differential topology are identical to each other.
 4. The differential input stage of claim 2, wherein: a noise figure of the differential input stage is less than 3 dB; a product of an impedance between the first and second emitter multiplied by a tail current is such that a high 3^(rd) order input intercept point is 118 dBμV; and power consumption of the differential input stage is 5 times less than the prior art.
 5. The differential input stage of claim 4, wherein the impedance between the first and second emitter is 10 pF, the tail current is 2 mA, a frequency is 106 MHz such that a 3^(rd) order input intercept point is 118 dBμV.
 6. The differential input stage of claim 4, wherein the impedance between the first and second emitter is 10 pF, the tail current is 10 mA, a frequency is 106 MHz such that a 3^(rd) order input intercept point is 136 dBμV.
 7. A double balanced mixer for an FM broadcast receiver, comprising a lower stage including a low-power high dynamic range input stage according to claim 1, wherein the first and second collector resistor each have a value of 100 ω to avoid parasitic oscillations,
 8. A double balanced mixer for an FM broadcast receiver, comprising a lower stage including a low-power high dynamic range input stage according to claim 4, wherein the first and second collector resistor each have a value of 100 ω to avoid parasitic oscillations,
 9. A double balanced mixer for UHF part of a television set, comprising: an upper stage; and a lower stage including a low-power high dynamic range input stage according to claim 1, wherein the emitter degeneration component comprises two variable capacitance diodes and a control voltage for the two variable capacitance diodes is the same as a tuning voltage for a local oscillator that drives the upper stage, and wherein the first and second collector resistor each have a value of 100 ω to avoid parasitic oscillations,
 10. A double balanced mixer for an RF front-end part of a wide-band receiver, comprising: a lower stage including a low-power high dynamic range input stage according to claim 1, wherein: i. the emitter degeneration component comprises a first and second variable capacitance diode biased at a fixed 0 V DC level, connected back-to-back in series with each other and respectively connected to the first and second emitter via a first and second fixed series capacitor; ii. the first and second collector resistor each have a value of 100 ω to avoid parasitic oscillations.
 11. The double balanced mixer of claim 10, wherein an anode of the first and second variable capacitance diode is connected to the ground via a resistor in order to obtain a DC path to the ground such that the first and second variable capacitance diodes are biased at a fixed OV DC level.
 12. A method for lowering power consumption and raising the dynamic range of a differential input stage, comprising the steps of: providing a first and second differential input transistor each having an internal base resistance of R_(b) and a small signal emitter resistance of r_(e); connecting the provided first and second differential input transistor to a first and second differential input signal; connecting a first and second collector resistor respectively to a first and second collector of the first and second differential transistor; providing an emitter degeneration component; and connecting the emitter degeneration component between a first and second emitter, respectively, of the first and second differential transistor.
 13. The method of claim 12, wherein the step of providing an emitter degeneration component comprises: providing a capacitor that contributes no noise to the input stage and calculating the contribution to the noise level of the input stage as the sum of the two base resistors R_(b) and two times half the small signal emitter resistance of r_(e).
 14. The method of claim 13, wherein: a noise figure is less than 3 dB; the product of an impedance between the first and second emitter multiplied by a tail current is such that a high 3^(rd) order input intercept point is 118 dBμV.
 15. The method of claim 14, wherein the impedance between the first and second emitter is 10 pF, the tail current is 2 mA, a frequency is 106 MHz such that a 3^(rd) input intercept point is 118 dBμV.
 16. The method of claim 14, wherein the impedance between the first and second emitter is 10 pF, the tail current is 10 mA, a frequency is 106 MHz such that a 3^(rd) order input intercept point is 136 dBμV.
 17. A receiver, comprising a receiver front end including a differential input stage according to claim 8 such that the need for a low noise amplifier LNA prior to the differential input stage is eliminated.
 18. A receiver, comprising a receiver front end including a differential input stage according to claim 9 such that the need for a low noise amplifier LNA prior to the differential input stage is eliminated.
 19. A receiver, comprising a receiver front end including a differential input stage according to claim 10 such that the need for a low-noise amplifier LNA prior to the differential input stage is eliminated.
 20. A method for lowering power consumption and raising the dynamic range of a differential input stage, comprising the steps of: providing a first and second differential input amplification component; connecting the provided first and second differential input amplification component to a differential input signal; connecting a noiseless component between the first and second differential input amplifier component to achieve a predictable gain.
 21. The method of claim 20, wherein: the first and second differential input amplification component is a field effect transistor FET having an internal gate series resistance R_(g) and a small signal source resistance r_(s) wherein r_(s) is l/g_(m) and g_(m) is the transconductance of the FET; and further comprising the steps of: a. connecting a first and second drain resistor respectively to a first and second drain of the first and second FET; b. connecting the noiseless degeneration component between a first and second source, respectively, of the first and second FET, and c. calculating the contribution to the noise level of the input stage as the sum of the two internal gate series resistors R_(g) and two times the small signal source resistance of r_(s).
 22. The method of claim 21 , wherein: a noise figure of the input stage is less than 5 dB; the product of an impedance between the first and second source multiplied by a tail current is such that a high 3^(rd) order input intercept point is higher than 118 dBμV.
 23. The method of claim 22, wherein the impedance between the first and second source is 10 pF, the tail current is 2 mA, a frequency is 106 MHz such that a 3^(rd) input intercept point is higher than 118 dBμV. 